Specifications
C-Band Solid-State High-Power Pulsed Amplifier |
|
Based on GaN (Galium nitride) | |
HEMT Technology | |
Operational frequency | 5200.00 MHz to 5650.00 MHz |
Peak power output – Single module | 1.3 Kw / 61.14 dBm |
Duty cycle | 10% (pulsed) |
Maximum pulse width | 300 micro-seconds |
Primary DC power | 50.0 to 54.0 vdc |
Primary current | 1.45 amps |
Block gain | 61.0 dBm |
RF input drive level | 0.0 to +2.0 dBm (typical) |
Input RF connector | SMA female |
Output RF connector | 7/16 DIN female |
Control and monitor | RJ-45 ethernet |
DC power connector | Circular military (locking) |
Form factor physical | 10.5 x 10.5 x 1.5 inches |
Unit weight | 1.85 lbs/.84 Kg |
Operating Temperature | -40 C to +70 C |
All specifications subject to change without notice.
WDS Radar | Evergreen, CO | 720-837-9468 M