Specifications
S-Band Solid-State Pulsed High-Power Amplifier |
|
Based on GaN (Galium nitride) | |
HEMT Technology | |
Operational frequency | 2900.00 MHz (lower S-band) 3600.00 MHz (upper S-band) |
700 MHz band coverage | |
Peak power output – Single module | 2.9 KW (typical) |
Duty cycle | 10% pulsed |
Maximum pulse width | 300 micro-seconds |
Primary DC power | 50.0 to 54.0 vdc |
Primary current | 2.4 amps |
Block gain | 64.7 dBm |
RF input drive level | 0.0 dBm (typical) |
Input RF connector | SMA female |
Output RF connector | 7/16 DIN female |
Control and monitor | RJ-45 ethernet |
DC power connector | Circular military (locking) |
Form factor physical | 12.5 x 12.5 x 2.5 inches |
Unit weight | 3.55 lbs/1.61 Kg |
Operating Temperature | -40 C to +70 C |
All specifications subject to change without notice.
WDS Radar | Evergreen, CO | 720-837-9468 M