C-Band Solid-State High-Power Pulsed Amplifier
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| Based on GaN (Galium nitride) |
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| HEMT Technology |
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| Operational frequency |
5200.00 MHz to 5650.00 MHz |
| Peak power output – Single module |
1.3 Kw / 61.14 dBm |
| Duty cycle |
10% (pulsed) |
| Maximum pulse width |
300 micro-seconds |
| Primary DC power |
50.0 to 54.0 vdc |
| Primary current |
1.45 amps |
| Block gain |
61.0 dBm |
| RF input drive level |
0.0 to +2.0 dBm (typical) |
| Input RF connector |
SMA female |
| Output RF connector |
7/16 DIN female |
| Control and monitor |
RJ-45 ethernet |
| DC power connector |
Circular military (locking) |
| Form factor physical |
10.5 x 10.5 x 1.5 inches |
| Unit weight |
1.85 lbs/.84 Kg |
| Operating Temperature |
-40 C to +70 C |
