S-Band Solid-State Pulsed High-Power Amplifier
|
| Based on GaN (Galium nitride) |
|
| HEMT Technology |
|
| Operational frequency |
2900.00 MHz (lower S-band) 3600.00 MHz (upper S-band) |
|
700 MHz band coverage |
| Peak power output – Single module |
2.9 KW (typical) |
| Duty cycle |
10% pulsed |
| Maximum pulse width |
300 micro-seconds |
| Primary DC power |
50.0 to 54.0 vdc |
| Primary current |
2.4 amps |
| Block gain |
64.7 dBm |
| RF input drive level |
0.0 dBm (typical) |
| Input RF connector |
SMA female |
| Output RF connector |
7/16 DIN female |
| Control and monitor |
RJ-45 ethernet |
| DC power connector |
Circular military (locking) |
| Form factor physical |
12.5 x 12.5 x 2.5 inches |
| Unit weight |
3.55 lbs/1.61 Kg |
| Operating Temperature |
-40 C to +70 C |
